NUCLEATION AND COALESCENCE IN HYDROGENATED AMORPHOUS-SILICON STUDIED BY SCANNING-TUNNELING-MICROSCOPY

被引：16

作者：

IKUTA, K

TANAKA, K

YAMASAKI, S

MIKI, K

MATSUDA, A

机构：

[1] UNIV TSUKUBA,FAC MAT SCI,TSUKUBA,IBARAKI 305,JAPAN

[2] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 14期

关键词：

D O I：

10.1063/1.112910

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Direct subnanometer-scale observation was made on an ultrathin film of hydrogenated amorphous silicon deposited on a highly oriented pyrolytic graphite substrate, using a ultrahigh vacuum scanning tunneling microscopy. Subnanostructures with a size of 5-10 angstrom were observed on the top surface independent of the film thickness below 400 angstrom, which are speculated to be SiH3. It is demonstrated that coalescence between nuclei (clusters) is enhanced by a surface diffusion of SiH3 precursors. (C) 1994 American Institute of Physics.

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页码：1760 / 1762

页数：3

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