NATURE OF THE SI AND N DANGLING BONDS IN SILICON-NITRIDE

被引：47

作者：

ROBERTSON, J

WARREN, WL

KANICKI, J

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

[2] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,ANN ARBOR,MI 48109

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1995年 / 187卷

关键词：

D O I：

10.1016/0022-3093(95)00153-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Si and nitrogen dangling bond defects in amorphous silicon nitride a-SINx:H are most stable in their charged, diamagnetic states. Excitation to their paramagnetic states is found to occur by both charge conversion of Si defects or N defects or by charge transfer between Si and N defects. The stability of charged defects is modelled in terms of potential fluctuations whose magnitude exceeds their positive correlation energy.

引用

页码：297 / 300

页数：4

共 20 条

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