EXCITONIC ENERGIES AND INHOMOGENEOUS LINE BROADENING EFFECTS IN INALAS/INGAAS MODULATOR STRUCTURES

被引：21

作者：

HONG, S

SINGH, J

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 05期

关键词：

D O I：

10.1063/1.339539

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1994 / 1999

页数：6

相关论文

共 25 条

[1] ENERGY LEVELS OF DIRECT EXCITONS IN SEMICONDUCTORS WITH DEGENERATE BANDS
BALDERESCHI, A
LIPARI, NO
[J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02): : 439 - +
[2] EXCITON BINDING-ENERGY IN QUANTUM WELLS
BASTARD, G
MENDEZ, EE
CHANG, LL
ESAKI, L
[J]. PHYSICAL REVIEW B, 1982, 26 (04): : 1974 - 1979
[3] ELECTRO-ABSORPTION BY STARK-EFFECT ON ROOM-TEMPERATURE EXCITONS IN GAAS/GAALAS MULTIPLE QUANTUM WELL STRUCTURES
CHEMLA, DS
DAMEN, TC
MILLER, DAB
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (10) : 864 - 866
[4] MOLECULAR-BEAM EPITAXIAL-GROWTH AND OPTICAL-PROPERTIES OF GA0.47IN0.53AS AL0.48IN0.52AS ON INP AND GA1-XINXAS/GAAS ON GAAS QUANTUM WELLS
GOLDSTEIN, L
CHARASSE, MN
JEANLOUIS, AM
LEROUX, G
ALLOVON, M
MARZIN, JY
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 947 - 949
[5] GOODHUE WD, 1985, 6TH MBE WORKSH MINN
[6] BINDING-ENERGIES OF WANNIER EXCITONS IN GAAS-GA1-XALXAS QUANTUM WELL STRUCTURES
GREENE, RL
BAJAJ, KK
[J]. SOLID STATE COMMUNICATIONS, 1983, 45 (09) : 831 - 835
[7] DETERMINATION OF THE MICROSCOPIC QUALITY OF INGAAS-INALAS INTERFACES BY PHOTOLUMINESCENCE - ROLE OF INTERRUPTED MOLECULAR-BEAM EPITAXIAL-GROWTH
JUANG, FY
BHATTACHARYA, PK
SINGH, J
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (04) : 290 - 292
[8] JUANG FY, IN PRESS J CRYST GRO
[9] ELECTRIC-FIELD INDUCED DECREASE OF PHOTOLUMINESCENCE LIFETIME IN GAAS QUANTUM WELLS
KASH, JA
MENDEZ, EE
MORKOC, H
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (02) : 173 - 175
[10] VALENCE-BAND PARAMETERS IN CUBIC SEMICONDUCTORS
LAWAETZ, P
[J]. PHYSICAL REVIEW B, 1971, 4 (10): : 3460 - &