HG DIFFUSION-INDUCED DEFECTS IN CDS CRYSTALS

被引:3
作者
CAVENEY, RJ
机构
[1] Department of Physics, University of the Witwatersrand, Johannesburg
[2] Adamant Research Laboratory, Johannesburg, Crown Mines
来源
PHILOSOPHICAL MAGAZINE | 1968年 / 18卷 / 155期
关键词
D O I
10.1080/14786436808227516
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Stacking faults were observed in CdS crystals into which Hg had been diffused. Type II faults predominated over Type III faults, and no Type I faults were observed. A model, based on the effective charges present on the Cd and Hg ions, is presented, which indicates that the presence of Hg in the lattice lowers the stacking-fault energy. © 1968 Taylor & Francis Group, LLC.
引用
收藏
页码:939 / &
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