HG DIFFUSION-INDUCED DEFECTS IN CDS CRYSTALS

被引：3

作者：

CAVENEY, RJ

机构：

[1] Department of Physics, University of the Witwatersrand, Johannesburg

[2] Adamant Research Laboratory, Johannesburg, Crown Mines

来源：

PHILOSOPHICAL MAGAZINE | 1968年 / 18卷 / 155期

关键词：

D O I：

10.1080/14786436808227516

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Stacking faults were observed in CdS crystals into which Hg had been diffused. Type II faults predominated over Type III faults, and no Type I faults were observed. A model, based on the effective charges present on the Cd and Hg ions, is presented, which indicates that the presence of Hg in the lattice lowers the stacking-fault energy. © 1968 Taylor & Francis Group, LLC.

引用

页码：939 / &

共 9 条

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[2] CHEMICAL BONDING AND STRUCTURE OF SEMICONDUCTOR COMPOUNDS
CAVENEY, RJ
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[J]. PHYSICA STATUS SOLIDI, 1966, 14 (02): : K115 - &
[6] Kirkendall EO, 1942, T AM I MIN MET ENG, V147, P104
[7] SUCHET JP, 1965, CHEMICAL PHYSICS SEM
[8] SUZUKI H, 1955, SCI REP RES I TOHO A, V7, P194
[9] [No title captured]

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