MOMBE OF INAS ON GAAS

被引：17

作者：

KAMP, M ^{[1
]}

WEYERS, M ^{[1
]}

HEINECKE, H ^{[1
]}

LUTH, H ^{[1
]}

BALK, P ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST SEMICOND ELECTR,W-5100 AACHEN,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 105卷 / 1-4期

关键词：

Semiconducting Gallium Arsenide;

D O I：

10.1016/0022-0248(90)90357-Q

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We present results of a study on MOMBE growth of InAs on GaAs (100), using precracked arsine and two different alkyls (TMI, TEI). Despite the 7% lattice mismatch, mirrorlike layers with good crystalline and excellent electrical properties were achieved, as shown by RBS and Hall measurements. At growth temperatures above 810 K the carrier concentration (n = (2-3)×1016 cm-3) did not depend on the nature of the precursor. At low temperatures the carrier concentration remained unchanged for TEI, whereas for TMI a significant increase of background doping level to n = 3×1018 cm-3 was observed. The assumption that this is caused by carbon incorporation due to the strength of the In-methyl bond is supported by SIMS measurements. © 1990.

引用

页码：178 / 184

页数：7

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