TOTAL DOSE HOMOGENEITY STUDY OF THE 108A OPERATIONAL-AMPLIFIER

被引：19

作者：

JOHNSTON, AH

LANCASTER, CA

机构：

[1] Boeing Aerospace Company, Seattle

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1979年 / 26卷 / 06期

关键词：

D O I：

10.1109/TNS.1979.4330225

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study investigated the homogeneity of total dose degradation of 108A-type operational amplifiers at various traceability levels. Hardness variability was compared at the diffusion lot, wafer and sub-wafer levels for breakout transistors as well as complete circuits, and providesa basis for selecting sampling and control procedures for hardness assurance. The study also showed that lower specification devices from the same wafer or diffusion lot could be used as radiation test samples to determine the hardness of the low yield 108A devices. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：4769 / 4774

页数：6