STUDY OF RADIATION STABILITY IN SIN X-RAY MASK MEMBRANES FOR SYNCHROTRON RADIATION LITHOGRAPHY

被引：1

作者：

ARAKAWA, T

SUGIHARA, T

OKADA, K

UEKI, T

MAEDA, Y

IZAWA, H

MATSUO, T

NOGUCHI, F

机构：

[1] SORTEC Corporation, Tsukuba-shi, Ibaraki, 300-42, 16-1, Wadai

[2] Nikon Corporation, Shinagawa-ku, Tokyo, 140, 1-6-3, Nishi-Ohi

[3] Toppan Printing Co., Ltd., Kitakatsushika-gun, Saitama, 345, 4-2-3, Takanodai-minami, Sugito-cho

来源：

MICROELECTRONIC ENGINEERING | 1992年 / 17卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(92)90038-S

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The radiation stability in silicon nitride (SiN) membranes for synchrotron radiation (SR) lithography has been investigated in a helium ambient, using scanning-mirror exposure method. It was found that the displacement along the y-axis of an SiN membrane is larger than that along the x-axis. A mirror was oscillated along the y-axis in order to obtain a 30 mm square irradiation, thereby producing the variation in the SR spectrum absorption difference in the membrane, especially in the wavelength region below the silicon absorption edge (0.67 nm in wavelength), although an SR power per unit area was given on a resist almost uniformly. As a result, it is considered that this SR spectrum absorption difference causes larger displacements along the y-axis of the SiN membrane.

引用

页码：185 / 188

页数：4

共 4 条

[1]

Acosta, Microelectronic Engineering, 13, (1991)

[2]

Hori, Mori, Nadahara, Kikuchi, Komana, Tanaka, 1st. MicroProcess Conference, Digest A-7-3, (1988)

[3]

Oizumi, Mochiji, Kimura, Influence of Oxygen upon Radiation Durability of SiN X-ray Mask Membranes, Japanese Journal of Applied Physics, 29, (1990)

[4]

Nishino, Kawakami, Yanagisawa, Okada, Development of centrally controlled synchrotron radiation lithography beamline system, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 8 B, (1990)

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