THE STOKES SHIFT IN GOOD QUALITY QUANTUM-WELL STRUCTURES

被引：7

作者：

GURIOLI, M ^{[1
]}

MARTINEZPASTOR, J ^{[1
]}

VINATTIERI, A ^{[1
]}

COLOCCI, M ^{[1
]}

机构：

[1] UNIV FLORENCE,DEPT PHYS,I-50125 FLORENCE,ITALY

来源：

SOLID STATE COMMUNICATIONS | 1994年 / 91卷 / 12期

关键词：

D O I：

10.1016/0038-1098(94)90426-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The origin of the red shift of the excitonic luminescence with respect to the absorption peak (Stokes shift) in good quality quantum wells, usually ascribed to exciton trapping, is explained in terms of a thermal population of the inhomogeneous distribution of excitonic states. Within this new picture the Stokes shift turns out to be quadratic on the absorption linewidth and inversely proportional to the excitonic temperature. The predictions are found to be in good agreement with careful measurements in a set of GaAs/AlGaAs single quantum well structures.

引用

收藏

页码：931 / 935

页数：5

相关论文

共 12 条

[1] LOW-TEMPERATURE EXCITON TRAPPING ON INTERFACE DEFECTS IN SEMICONDUCTOR QUANTUM WELLS [J].

BASTARD, G ;

DELALANDE, C ;

MEYNADIER, MH ;

FRIJLINK, PM ;

VOOS, M .

PHYSICAL REVIEW B, 1984, 29 (12) :7042-7044

[2] LOCALIZATION-DEPENDENT THERMALIZATION OF EXCITONS IN GAAS/ALXGA1-X AS QUANTUM WELLS [J].

COLVARD, C ;

BIMBERG, D ;

ALAVI, K ;

MAIERHOFER, C ;

NOURI, N .

PHYSICAL REVIEW B, 1989, 39 (05) :3419-3422

[3] EFFECT OF TEMPERATURE ON EXCITON TRAPPING ON INTERFACE DEFECTS IN GAAS QUANTUM WELLS [J].

DELALANDE, C ;

MEYNADIER, MH ;

VOOS, M .

PHYSICAL REVIEW B, 1985, 31 (04) :2497-2498

[4] WELL-WIDTH AND ALUMINUM-CONCENTRATION DEPENDENCE OF THE EXCITON BINDING-ENERGIES IN GAAS/ALXGA1-XAS QUANTUM-WELLS [J].

GURIOLI, M ;

MARTINEZPASTOR, J ;

COLOCCI, M ;

BOSACCHI, A ;

FRANCHI, S ;

ANDREANI, LC .

PHYSICAL REVIEW B, 1993, 47 (23) :15755-15762

[5]

GURIOLI M, IN PRESS

[6] EXCITON LINE-SHAPES OF GAAS/ALAS MULTIPLE-QUANTUM WELLS [J].

HUMLICEK, J ;

SCHMIDT, E ;

BOCANEK, L ;

SVEHLA, R ;

PLOOG, K .

PHYSICAL REVIEW B, 1993, 48 (08) :5241-5248

[7] ORIGIN OF THE STOKES SHIFT - A GEOMETRICAL MODEL OF EXCITON SPECTRA IN 2D SEMICONDUCTORS - COMMENT [J].

KASH, JA .

PHYSICAL REVIEW LETTERS, 1993, 71 (08) :1286-1286

[8] PICOSECOND TIME-RESOLVED STUDY OF EXCITONS IN GAAS-ALAS MULTI-QUANTUM-WELL STRUCTURES [J].

MASUMOTO, Y ;

SHIONOYA, S ;

KAWAGUCHI, H .

PHYSICAL REVIEW B, 1984, 29 (04) :2324-2327

[9] INFLUENCE OF EXCITON LOCALIZATION ON RECOMBINATION LINE-SHAPES - INXGA1-XAS/GAAS QUANTUM-WELLS AS A MODEL [J].

SCHNABEL, RF ;

ZIMMERMANN, R ;

BIMBERG, D ;

NICKEL, H ;

LOSCH, R ;

SCHLAPP, W .

PHYSICAL REVIEW B, 1992, 46 (15) :9873-9876

[10] A STATISTICAL TOPOGRAPHIC MODEL FOR EXCITON LUMINESCENCE SPECTRA [J].

WILKINSON, M ;

YANG, F ;

AUSTIN, EJ ;

ODONNELL, KP .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1992, 4 (45) :8863-8878