THERMOMAGNETIC EFFECTS IN BISMUTH .2. NERNST-ETTINGSHAUSEN EFFECT

被引:18
作者
SUGIHARA, K
机构
[1] Wireless Research Laboratory, Matsushita Electric Industrial Co., Ltd, Kadoma, Osaka
关键词
D O I
10.1143/JPSJ.27.362
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Theoretical explanation of the anomalous feature of the Nernst-Etting-shausen coefficient ANE in bismuth is presented. Temperature dependence of ANE is entirely different from the one predicted by a theory ignoring the deviation of the phonon distribution. Coupled Boltzmann equations for carriers and phonons are solved on the weak field approximation. These solutions reveal to us that the phonon drag effect and the indirect interactions of electrons and holes through the phonon drag effect, are responsible for the appearance of the anomalous effect. In strong magnetic field ANE is related to the phonon drag thermoelectric power derived in the preceding paper. This relation explains the qualitative feature of ANE at low temperatures. © 1969, THE PHYSICAL SOCIETY OF JAPAN. All rights reserved.
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页码:362 / &
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