ANALYSIS OF CURRENT-TEMPERATURE LIGHT CHARACTERISTICS OF GAASP LIGHT-EMITTING-DIODES

被引:8
作者
TANAKA, Y
TOYAMA, T
机构
[1] Research and Development Center, Eastman Kodak (Japan) Ltd., Yokohama
关键词
D O I
10.1109/16.297748
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The current-temperature-light characteristics of GaAsP light-emitting diodes have been studied. Functional forms of the light intensity and the temperature coefficient (temperature derivative of the light intensity) dependence on the electric current have been obtained. These functional forms agree well with experimental results.
引用
收藏
页码:1475 / 1477
页数:3
相关论文
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[2]  
PHAM HT, 1989, Patent No. 4831395
[3]  
PILKUN MH, 1981, HDB SEMICONDUCTORS, V4, pCHA5
[4]   DETAILED LIGHT-CURRENT-VOLTAGE ANALYSIS OF GAP ELECTROLUMINESCENT DIODES [J].
RALSTON, JM .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) :2635-2641