BOND-STRENGTH MEASUREMENTS RELATED TO SILICON SURFACE HYDROPHILICITY

被引：57

作者：

BACKLUND, Y

HERMANSSON, K

SMITH, L

机构：

[1] Institute of Technology, Dept. of Electronics, Uppsala University

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1992年 / 139卷 / 08期

关键词：

D O I：

10.1149/1.2221218

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The hydrophilicity level of commonly used surface treatments prior to silicon fusion bonding has been measured and related to a resulting bond strength. The necessity of hydrophilic silicon surfaces to yield a strong bond has been questioned, even counter-proved. The strongest bonds measured were for hydrophobic, HF-treated wafers annealed at 800-degrees-C.

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页码：2299 / 2301

页数：3

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