A MONOLITHICALLY INTEGRATED 120-GHZ INGAAS INALAS INP HEMT AMPLIFIER

被引：11

作者：

LAI, R

WANG, H

TAN, KL

STREIT, DC

LIU, PH

VELEBIR, J

CHEN, S

BERENZ, J

POSPIESZALSKI, MW

机构：

[1] TRW Advanced Microelectronics Laboratory, Redondo Beach

[2] National Radio Astronomy Observatory, Charlottesville

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1994年 / 4卷 / 06期

关键词：

Gain performance - High electron mobility transistor amplifier - Indium aluminum arsenide - Indium gallium arsenide - Monolithically integrated amplifiers;

D O I：

10.1109/75.294290

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the design and gain performance for a two-stage 120-GHz monolithically integrated amplifier using 0.1-mum gate length pseudomorphic In0.6Ga0.40As/In0.52 Al0.48As/InP HEMT's. The two-stage amplifier demonstrated 10-12 dB gain measured between 119.5 to 123.5 GHz. To the best of our knowledge, this is the first demonstration of a monolithically integrated InP HEMT amplifier reported at D-band.

引用

页码：194 / 195

页数：2

共 9 条

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[2]

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