MOSFET dosimeters: The role of encapsulation on dosimetric characteristics in mixed gamma-neutron and megavoltage X-ray fields

被引:52
作者
Rosenfeld, AB [1 ]
Carolan, MG [1 ]
Kaplan, GI [1 ]
Allen, BJ [1 ]
Khivrich, VI [1 ]
机构
[1] ST GEORGE HOSP,CANC CARE CTR,KOGARAH,NSW 2217,AUSTRALIA
关键词
D O I
10.1109/23.489229
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper is concerned with the role of the package of MOSFETs used in measurements of gamma dose in mixed gamma-neutron fields, in high energy bremsstrahlung and soft X-ray fields. It is shown that a kovar cap should be avoided for dosimetry applications in the presence of strong thermal neutron fluences. In regions of strong electronic disequilibrium the 'bare' or unencapsulated MOSFET is a unique tool for surface dose measurements and Monte Carlo model validation. For depths where electronic equilibrium exists (ie. x > depth of D-max) the MOSFET package is not critical. For low energy X-ray fields the energy dependence of the dose enhancement factor (DEF) will differ depending upon whether the irradiation is performed in free air geometry or on the surface of a phantom.
引用
收藏
页码:1870 / 1877
页数:8
相关论文
共 28 条
[1]  
ANDREO P, 1987, IAEA STIDOC277
[2]  
Attix F.H., 1986, INTRO RADIOLOGICAL P, P607, DOI 10.1002/9783527617135
[3]   DOSIMETRY CONSIDERATIONS FOR THE HIGH-ENERGY PHOTON ELECTRON ENVIRONMENT OF HERMES .3. IMPLICATIONS FOR EXPERIMENTS AND MODELING [J].
BEUTLER, DE ;
HALBLEIB, JA ;
SANFORD, TWL ;
FEHL, DL ;
KNOTT, DP .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1991, 38 (06) :1736-1745
[4]   EXPERIMENTAL-VERIFICATION OF BREMSSTRAHLUNG PRODUCTION AND DOSIMETRY PREDICTIONS AS A FUNCTION OF ENERGY AND ANGLE [J].
BEUTLER, DE ;
HALBLEIB, JA ;
SANFORD, TWL ;
KNOTT, DP .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1994, 41 (06) :2727-2736
[5]   PMOS DOSIMETERS - LONG-TERM ANNEALING AND NEUTRON RESPONSE [J].
BLAMIRES, NG ;
TOTTERDELL, DHJ ;
HOLMES-SIEDLE, AG ;
ADAMS, L .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1310-1315
[6]  
Briesmeister J. F., 1993, LA12625M
[7]  
BRUCKER GJ, 1993, RADECS C 93, P56
[8]  
BRUKER GJ, 1995, IEEE T NUC SCI, V42, P33
[9]   ON-CHIP P-MOSFET DOSIMETRY [J].
BUEHLER, MG ;
BLAES, BR ;
SOLI, GA ;
TARDIO, GR .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1993, 40 (06) :1442-1449
[10]  
CAROLAN MG, 1994, 6TH P INT S NEUTR CA