PHOTOEMISSION FROM INP-CS-O

被引：31

作者：

BELL, RL

UEBBING, JJ

机构：

来源：

关键词：

D O I：

10.1063/1.1651906

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：76 / &

共 9 条

[1] INFRARED DIELECTRIC CONSTANT AND ULTRAVIOLET OPTICAL PROPERTIES OF SOLIDS WITH DIAMOND ZINC BLENDE WURTZITE AND ROCKSALT STRUCTURE
CARDONA, M
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (07) : 2181 - &
[2] CARDONA M, 1967, SEMICONDUCTORS SEMIM, V3, P527
[3] EXPERIMENTAL EVIDENCE FOR OPTICAL POPULATION OF X MINIMA IN GAAS
EDEN, RC
MOLL, JL
SPICER, WE
[J]. PHYSICAL REVIEW LETTERS, 1967, 18 (15) : 597 - &
[4] PHOTOELECTRIC EMISSION AND WORK FUNCTION OF INP
FISCHER, TE
[J]. PHYSICAL REVIEW, 1966, 142 (02): : 519 - &
[5] GaAs-Cs: A NEW TYPE OF PHOTOEMITTER
Scheer, J. J.
van Laar, J.
[J]. SOLID STATE COMMUNICATIONS, 1965, 3 (08) : 189 - 193
[6] STURGE MD, 1962, PHYS REV, V127, P786
[7] TURNER WJ, 1964, PHYS REV A-GEN PHYS, V136, P1467
[8] WEBER S, 1965, Z ANGEW PHYSIK, V19, P193
[9] WILLARDSON RK, 1967, SEMICONDUCTORS SE ED, V3, P527