CALCULATIONS OF 2-PHOTON CONDUCTIVITY IN SEMICONDUCTORS

被引：14

作者：

YEE, JH

机构：

[1] Lawrence Radiation Laboratory, University of California, Livermore

来源：

APPLIED PHYSICS LETTERS | 1969年 / 14卷 / 07期

关键词：

D O I：

10.1063/1.1652792

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The photoconductivity produced in some direct-band-gap semiconductors by the two-photon absorption process is investigated theoretically and found to be a very complicated function of the crystal parameters, the excitation photon energy, and the light excitation intensity. An application of the theory to a GaAs crystal is carried out. © 1969 The American Institute of Physics.

引用

页码：231 / &

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