GEOMETRICAL MAGNETORESISTANCE AND HALL MOBILITY IN GUNN EFFECT DEVICES

被引：75

作者：

JERVIS, TR

JOHNSON, EF

机构：

来源：

SOLID-STATE ELECTRONICS | 1970年 / 13卷 / 02期

关键词：

D O I：

10.1016/0038-1101(70)90049-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：181 / &

共 14 条

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[10] DER GEOMETRIEEINFLUSS AUF DEN HALL-EFFEKT BEI RECHTECKIGEN HALBLEITERPLATTEN [J].

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