CHAOTIC FLUCTUATIONS AND FORMATION OF A CURRENT FILAMENT IN N-TYPE GAAS

被引：35

作者：

BRANDL, A

PRETTL, W

机构：

[1] Institut F̈r Angewandte Physik, Universität Regensburg

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 66卷 / 23期

关键词：

D O I：

10.1103/PhysRevLett.66.3044

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A novel nonlinear model is presented for the occurrence of current fluctuations at low temperatures in extrinsic semiconductors. It is based on impact ionization of shallow impurities and structure-forming processes leading to a current filament. Numerical investigations reproduce the current-voltage characteristics and reveal regular, quasiperiodic, and frequency-locked spontaneous current oscillations and a Ruelle-Takens-Newhouse transition to chaos in agreement with experimental observations in n-type GaAs.

引用

页码：3044 / 3047

页数：4

共 39 条

[1]

ANCKERJOHNSON B, 1966, SEMICONDUCT SEMIMET, V1, P379

[2] NONLINEAR RESPONSE AND CHAOS IN SEMICONDUCTORS INDUCED BY IMPACT IONIZATION [J].