OPTIMIZATION OF SPUTTERED SNO2 FILMS AS GAS-SENSITIVE LAYERS FOR SUSPENDED-GATE FETS

被引：5

作者：

PESCHKE, M

HANSCH, W

LECHNER, J

LORENZ, H

RIESS, H

EISELE, I

机构：

[1] Institut für Physik, Fakultät für Elektrotechnik, Universität der Bundeswehr München

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1991年 / 4卷 / 1-2期

关键词：

D O I：

10.1016/0925-4005(91)80192-M

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Tin oxide films have been prepared by reactive sputter deposition. Characterization with respect to stoichiometry and homogeneity has been carried out. Optimized films are incorporated as gas-sensitive layers in suspended-gate field-effect transitors. These sensors have been measured with respect to oxidizing and reducing gases.

引用

页码：157 / 160

页数：4

共 6 条

[1] HYDROGEN RESPONSE OF PALLADIUM COATED SUSPENDED GATE FIELD-EFFECT TRANSISTOR
CASSIDY, J
PONS, S
JANATA, J
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[2] HEILAND G, 1982, SENSOR ACTUATOR, V2, P343, DOI 10.1016/0250-6874(81)80055-8
[3] LECHNER J, 1990, DIAMOND FILMS 90 CRA
[4] LORENZ H, 1990, SENSOR ACTUAT A-PHYS, V21, P1023
[5] MURAKAMI K, 1986, SENSOR ACTUATOR, V9, P133
[6] RECOGNITION OF HYDROGEN AND AMMONIA BY MODIFIED GATE METALLIZATION OF THE SUSPENDED-GATE FET
PESCHKE, M
LORENZ, H
RIESS, H
EISELE, I
[J]. SENSORS AND ACTUATORS B-CHEMICAL, 1990, 1 (1-6) : 21 - 24

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