DIODE CHARACTERISTICS AND EDGE EFFECTS OF METAL-SEMICONDUCTOR DIODES

被引:15
作者
TOVE, PA [1 ]
HYDER, SA [1 ]
SUSILA, G [1 ]
机构
[1] UPPSALA UNIV, TEKNIKUM, UPPSALA, SWEDEN
关键词
D O I
10.1016/0038-1101(73)90191-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:513 / 521
页数:9
相关论文
共 16 条
[1]  
ATALLA MM, 1968, P MICROELECTRONICS C, P137
[2]   SEMICONDUCTOR DETECTORS FOR NUCLEAR SPECTROMETRY [J].
GOULDING, FS .
NUCLEAR INSTRUMENTS & METHODS, 1966, 43 (01) :1-+
[3]  
HANSEN WL, 1961, 871 NATL AC SCI PUBL, P202
[4]   ZUR THEORIE DES GERMANIUMGLEICHRICHTERS UND DES TRANSISTORS [J].
KROMER, H .
ZEITSCHRIFT FUR PHYSIK, 1953, 134 (04) :435-450
[5]   SILICON SCHOTTKY BARRIER DIODE WITH NEAR-IDEAL I-V CHARACTERISTICS [J].
LEPSELTE.MP ;
SZE, SM .
BELL SYSTEM TECHNICAL JOURNAL, 1968, 47 (02) :195-+
[6]  
LINDMAYER J, 1965, FUNDAMENTALS SEMICON, P316
[7]   METAL-SEMICONDUCTOR SURFACE BARRIERS [J].
MEAD, CA .
SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1023-&
[8]  
PETERSON S, 1970, UUIP699 REP
[9]  
SZE SM, 1969, PHYSICS SEMICONDUCTO, P375
[10]  
SZE SM, 1969, PHYSICS SEMICONDUCTO, P367