THE PHOTOELECTROCHEMISTRY OF GALLIUM SELENIDE

被引:9
作者
GERISCHER, H [1 ]
GOBRECHT, J [1 ]
TURNER, J [1 ]
机构
[1] CALTECH,DIV CHEM,PASADENA,CA 91125
来源
BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 1980年 / 84卷 / 06期
关键词
D O I
10.1002/bbpc.19800840615
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:596 / 601
页数:6
相关论文
共 15 条
[1]   INFLUENCE OF CRYSTAL-SURFACE ORIENTATION ON REDOX REACTIONS AT SEMICONDUCTING MOS2 [J].
AHMED, SM ;
GERISCHER, H .
ELECTROCHIMICA ACTA, 1979, 24 (06) :705-711
[2]  
AKHUNDOV GA, 1975, SOV PHYS SEMICOND, V9, P95
[3]   POLARITON EFFECTS IN EXCITON ABSORPTION OF GASE [J].
BOSACCHI, A ;
BOSACCHI, B ;
FRANCHI, S .
PHYSICAL REVIEW LETTERS, 1976, 36 (18) :1086-1089
[4]   PHOTO-VOLTAIC PROPERTIES OF SOME SEMICONDUCTING LAYER STRUCTURES [J].
CLEMEN, C ;
SALDANA, XI ;
MUNZ, P ;
BUCHER, E .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 49 (02) :437-443
[5]  
CLEMEN C, 1978, 1977 PHOT SOL EN C L, P638
[6]   INSTABILITY OF CDSE AND CDS PHOTOANODES IN SULFIDE-POLYSULFIDE ELECTROLYTE [J].
GERISCHER, H ;
GOBRECHT, J .
BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1978, 82 (05) :520-522
[7]   ELECTROCHEMICAL SOLAR-CELL BASED ON THE D-BAND SEMICONDUCTOR TUNGSTEN-DISELENIDE [J].
GOBRECHT, J ;
GERISCHER, H ;
TRIBUTSCH, H .
BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1978, 82 (12) :1331-1335
[8]  
KAUTEK W, 1979, BER BUNSEN PHYS CHEM, V83, P1000, DOI 10.1002/bbpc.19790831010
[9]   BAND STRUCTURES OF GALLIUM AND INDIUM SELENIDE [J].
MCCANNY, JV ;
MURRAY, RB .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (08) :1211-1222
[10]   ELECTRONIC CHARGE-DENSITIES IN SEMICONDUCTING LAYER AND CHAIN STRUCTURES [J].
MOOSER, E ;
SCLUTER, IC ;
SCHLUTER, M .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1974, 35 (09) :1269-1284