THE INFLUENCE OF 173 MEV XE-ION IRRADIATION ON THE MICROSTRUCTURE OF YBA2CU3O7 THIN-FILMS

被引：45

作者：

WATANABE, H

KABIUS, B

URBAN, K

ROAS, B

KLAUMUNZER, S

SAEMANNISCHENKO, G

机构：

[1] SIEMENS AG,W-8520 ERLANGEN,GERMANY

[2] UNIV ERLANGEN NURNBERG,INST PHYS,W-8520 ERLANGEN,GERMANY

[3] HAHN MEITNER INST KERNFORSCH BERLIN GMBH,BERLIN,GERMANY

来源：

PHYSICA C | 1991年 / 179卷 / 1-3期

关键词：

D O I：

10.1016/0921-4534(91)90013-O

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

YBa2Cu3O7 thin films grown epitaxially on [001] SrTiO3 substrates have been irradiated at a temperature of 77 K with 173 MeV Xe-ions up to a dose of 3 x 10(16) m-2. A study of the irradiated films by transmission electron microscopy revealed amorphous channels with diameters between 2 and 4 nm. The density of these channels depended on the irradiated dose. The twin structure of the orthorhombic phase of YBa2Cu3O7 was found to disappear for high irradiation doses. It is concluded that the amorphous regions were introduced along the paths of Xe-ions as a results of electronic excitation. These regions can act as pinning centres for magnetic flux lines.

引用

页码：75 / 84

页数：10

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