PRESSURE-DEPENDENCE OF HOLE MOBILITY IN IN1-XGAXASYP1-Y AND ITS RELATION TO ALLOY SCATTERING

被引：4

作者：

HAYES, JR ^{[1
]}

TATHAM, HL ^{[1
]}

ADAMS, AR ^{[1
]}

GREENE, PD ^{[1
]}

机构：

[1] STAND TELECOMMUN LABS LTD,HARLOW CM17 9NA,ESSEX,ENGLAND

来源：

ELECTRONICS LETTERS | 1981年 / 17卷 / 06期

关键词：

D O I：

10.1049/el:19810163

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：230 / 232

页数：3

共 8 条

[1] EVIDENCE FOR ALLOY SCATTERING FROM PRESSURE-INDUCED CHANGES OF ELECTRON-MOBILITY IN IN1-XGAXASYP1-Y [J].

ADAMS, AR ;

TATHAM, HL ;

HAYES, JR ;

ELSABBAHY, AN .

ELECTRONICS LETTERS, 1980, 16 (14) :560-562

[2] CALCULATION OF ENERGY-BAND PRESSURE COEFFICIENTS FROM DIELECTRIC THEORY OF CHEMICAL BOND [J].

CAMPHAUSEN, DL ;

CONNELL, GAN ;

PAUL, W .

PHYSICAL REVIEW LETTERS, 1971, 26 (04) :184-+

[3] MOBILITY OF HOLES IN THE QUATERNARY ALLOY IN1-XGAXASYP1-Y [J].

HAYES, JR ;

ADAMS, AR ;

GREENE, PD .

ELECTRONICS LETTERS, 1980, 16 (08) :282-284

[4] VALENCE-BAND PARAMETERS IN CUBIC SEMICONDUCTORS [J].

LAWAETZ, P .

PHYSICAL REVIEW B, 1971, 4 (10) :3460-&

[5]

LITTLEJOHN MA, 1978, 7TH P INT S GAAS REL

[6] ELECTRONIC STRUCTURES OF SEMICONDUCTOR ALLOYS [J].

VANVECHTEN, JA ;

BERGSTRESSER, TK .

PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (08) :3351-+

[7]

WEISBERG LR, 1962, J APPL PHYS, V33, P1812

[8]

Wiley J. D., 1975, SEMICONDUCT SEMIMET, V10, P91

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