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LATERAL SOLID-PHASE EPITAXY OF SI INDUCED BY FOCUSED ION-BEAMS
被引：9
作者：
KANAYAMA, T
TANOUE, H
KOMURO, M
机构：
[1] Electrotechnical Lab, Sakura-mura, Jpn, Electrotechnical Lab, Sakura-mura, Jpn
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
|
1987年
/
26卷
/
02期
关键词：
CRYSTALS - Epitaxial Growth - ION BEAMS - Applications;
D O I：
10.1143/JJAP.26.L84
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Thin 200-nm-thick Si crystals were grown in Si layers amorphized with 800-keV As**2** plus ions by inducing lateral solid-phase epitaxy at 500 degree C with a 140-keV Si**2** plus pseudo-linear ion beam formed by scanning a point-focused beam at 5kHz. It is shown that reduction of dose rate of the ion beam is crucially important to induce the epitaxy because the amount of damage produced by the ions significantly increases with the dose rate and even amorphization occurs at a higher dose rate.
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页码：L84 / L86
页数：3
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