DESIGN CURVES FOR PREDICTING FAST-NEUTRON-INDUCED RESISTIVITY CHANGES IN SILICON

被引：22

作者：

BUEHLER, MG

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1968年 / 56卷 / 10期

关键词：

D O I：

10.1109/PROC.1968.6728

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1741 / &

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[9]

STEIN HJ, 1965, SCR65938 SAND CORP A

[10]

STEIN HJ, 1964, SCR64193 SAND CORP