共 6 条
- [1] OXYGEN AND THE SURFACE ENERGY-LEVEL STRUCTURE ON GERMANIUM [J]. PHYSICAL REVIEW, 1954, 95 (01): : 284 - 285
- [2] CLARKE EN, 1954, SYLVANIA TECHNOL, V7, P102
- [4] THERMALLY INDUCED ACCEPTORS IN SINGLE CRYSTAL GERMANIUM [J]. PHYSICAL REVIEW, 1953, 91 (03): : 757 - 758
- [5] VACANCIES AND INTERSTITIALS IN HEAT TREATED GERMANIUM [J]. PHYSICAL REVIEW, 1954, 95 (01): : 38 - 43
- [6] DRIFT MOBILITIES IN SEMICONDUCTORS .1. GERMANIUM [J]. PHYSICAL REVIEW, 1953, 92 (03): : 681 - 687