TUNNEL OXIDES GROWN BY RAPID THERMAL-OXIDATION

被引：7

作者：

DEPAS, M

VANMEIRHAEGHE, RL

LAFLERE, WH

CARDON, F

机构：

[1] Laboratorium voor kristallografie en studie van de vaste stof, Universiteit Gent, B-9000 Gent, Krijgslaan 281

来源：

MICROELECTRONIC ENGINEERING | 1993年 / 22卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(93)90130-W

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Oxide layers with a thickness from 2 to 5nm were grown on (100) Si utilizing rapid thermal oxidation. RTO is shown to be a reliable method to obtain good quality SiO2 tunnel barriers. An analytical model is used to discuss the charge transport in Al/SiO2/n-Si tunnel diodes quantitatively. The influence of an in situ hydrogen anneal on the SiO2/Si interface is examined.

引用

页码：61 / 64

页数：4

共 9 条

[1] Atanassova, Pushkarov, Solid-State Electron., 25, (1982)
[2] Vul', Didelkin, Osipov, Boitsov, Zinchik, Makarova, Sov. Phys. Semicond., 26, (1992)
[3] Tarr, Pulfrey, Camporese, An analytic model for the MIS tunnel junction, IEEE Transactions on Electron Devices, 30, (1983)
[4] Maserjian, Interface, (1988)
[5] Andersson, Xiao, Norrman, Engstrom, Phys. Rev. B, 41, (1990)
[6] Green, King, Shewchun, Solid-State Electron., 17, (1974)
[7] Nicollian, Brews, MOS Physics and Technology, (1982)
[8] Fukuda, Yasuda, Iwabuchi, Kaneko, Ueno, Ohdomari, J. Appl. Phys., 72, (1992)
[9] Saks, Andrews, J. Electron. Mat., 21, (1992)

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