3RD-ORDER OPTICAL NONLINEARITIES IN SEMICONDUCTORS - THE 2-BAND MODEL

被引:55
作者
AVERSA, C
SIPE, JE
SHEIKBAHAE, M
VANSTRYLAND, EW
机构
[1] UNIV TORONTO, ONTARIO LASER & LIGHTWAVE RES CTR, TORONTO, ON M5S 1A7, CANADA
[2] UNIV NEW MEXICO, DEPT PHYS & ASTRON, ALBUQUERQUE, NM 87131 USA
[3] UNIV CENT FLORIDA, CTR RES & EDUC OPT & LASERS, ORLANDO, FL 32826 USA
[4] UNIV CENT FLORIDA, DEPT PHYS & ELECT ENGN, ORLANDO, FL 32826 USA
关键词
D O I
10.1103/PhysRevB.50.18073
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We calculate the coherent electronic contributions to the third-order optical response (3) of bulk semiconductors in the independent-particle approximation using a simple two-band model. The formalism used to derive this response coefficient naturally accounts for all relevant contributions and, in contrast to existing results in the literature, leads to physically realistic, nondivergent expressions in the limits, 0. Such well behaved infrared limits imply that the imaginary part of our (3) correctly describes the dispersion of nondegenerate absorption; indeed for =0 our results are consistent with predictions from Franz-Keldysh theory. Complementing these results, we can now also unambiguously extract from the real part of (3) the below band gap, two-band model predictions for the nonlinear refractive index, the dc Kerr effect, and the virtual photoconductivity; all of these predict a finite, real (3)(0;0,0,0) as physically expected for clean, cold semiconductors. Finally, our specific results help expose more general consequences of the gauge choice when employing common approximate band-structure models. © 1994 The American Physical Society.
引用
收藏
页码:18073 / 18082
页数:10
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