SILICON EPITAXY ON GERMANIUM USING A SIH4 LOW-PRESSURE CHEMICAL-VAPOR DEPOSITION PROCESS

被引：11

作者：

FUJINAGA, K

TAKAHASHI, Y

ISHII, H

KAWASHIMA, I

HIROTA, S

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 06期

关键词：

D O I：

10.1116/1.583672

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1551 / 1554

页数：4

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