TRANSITION AND RARE-EARTH ELEMENTS USED AS LUMINESCENT PROBES IN STUDYING ION-IMPLANTED III-V-SEMICONDUCTORS AND II-VI-SEMICONDUCTORS

被引：5

作者：

GIPPIUS, AA

USHAKOV, VV

YAKIMKIN, VN

VAVILOV, VS

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 39卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(89)90833-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

收藏

页码：492 / 495

页数：4

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[2]

Ennen H., 1985, Thirteenth International Conference on Defects in Semiconductors, P115

[3]

GIPPIUS AA, 1986, MATER SCI FORUM, V10, P1195

[4]

Kamimura H., 1970, MULTIPLETS TRANSITIO

[5]

KAUFMAN U, 1982, ADV ELECTRICAL ELECT, P81