THICK-FILM CO GAS SENSORS

被引：32

作者：

NITTA, M

HARADOME, M

机构：

[1] Physical Science Laboratories, Nihon University at Narashino, Funabashi 274

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 03期

关键词：

D O I：

10.1109/T-ED.1979.19419

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A gas sensor of SnO2-based materials has been made by thick-film technology utilizing hydrophobic silica as a binder. The technology can achieve a high productivity as well as a reduced humidity dependence and a sufficient mechanical strength of sensors. A thick-film sensor of SnO2 incorporated with ThO2 shows highly selective detection for CO gas, separated from H2 gas; i.e., sensitivity to CO is 42 times higher than to H2 at both gas concentrations of 50 ppm. An excellent humidity-independent sensitivity is also achieved. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：247 / 249

页数：3