HIGH CONDUCTING LARGE AREA INDIUM TIN OXIDE ELECTRODES FOR DISPLAYS PREPARED BY DC MAGNETRON SPUTTERING

被引：84

作者：

LATZ, R

MICHAEL, K

SCHERER, M

机构：

[1] Leybold. AG, Alzenau, 8755

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 2A期

关键词：

ITO (INDIUM-TIN-OXIDE) LARGE AREA ELECTRODES; DISPLAY APPLICATION; ITO-SPUTTERING; ITO FILM PRODUCTION; LOW RESISTIVITY; HIGH TRANSMITTANCE;

D O I：

10.1143/JJAP.30.L149

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High conducting ITO films were deposited by DC magnetron sputtering using ITO targets. At substrate temperatures of 200-degrees-C and 300-degrees-C ITO films were reproducibly prepared with resistivities of 1.9 x 10(-4) omega-.cm respectively 1,4 x 10(-4) omega-.cm at a deposition rate of 20 angstrom/s. ITO films prepared at room temperature show after annealing at 200-degrees-C in air, nitrogen or vacuum the same low resistivity of 1.9 x 10(-4) omega-.cm when using optimum sputtering conditions. The influence of the deposition temperature on the electrical, optical and etching properties was studied and related to the structure of the ITO films. Details on an optimized in line sputtering system for the economic large scale production of ITO films are presented.

引用

页码：L149 / L151

页数：3