INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K

被引：929

作者：

DASH, WC

NEWMAN, R

机构：

来源：

PHYSICAL REVIEW | 1955年 / 99卷 / 04期

关键词：

D O I：

10.1103/PhysRev.99.1151

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1151 / 1155

页数：5

共 22 条

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BRATTAIN, WH
BRIGGS, HB
[J]. PHYSICAL REVIEW, 1949, 75 (11): : 1705 - 1710
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[5] DEXTER, 1954, PHYS REV, V96, P222
[6] EFFECTIVE MASSES OF HOLES IN SILICON
DEXTER, RN
LAX, B
[J]. PHYSICAL REVIEW, 1954, 96 (01): : 223 - 224
[7] DRESSELHAUS, 1954, PHYS REV, V95, P568
[8] DRESSELHAUS, 1953, PHYS REV, V92, P827
[9] FAN, 1954, NOV ATL CIT PHOT C
[10] Fan H Y, 1951, SEMICONDUCTING MATER, P132