CONTAMINATION OF CDS HETEROEPITAXIAL LAYERS DURING VAPOR GROWTH ON GAAS SUBSTRATES

被引：13

作者：

MOULIN, M

DUGUE, M

HUBER, A

机构：

来源：

关键词：

D O I：

10.1016/0022-0248(72)90249-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：212 / &

共 17 条

[1] SOME ELECTRICAL PROPERTIES OF ZINC TELLURIDE-CADMIUM SULFIDE HETEROJUNCTIONS
AVEN, M
COOK, DM
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (05) : 960 - &
[2] EPITAXIAL GROWTH AND PROPERTIES OF ZNTE-CDS HETEROJUNCTIONS
AVEN, M
GARWACKI, W
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) : 401 - 407
[3] BRUKL A, 1932, Z ANORG CHEM, V203, P23
[4] Curtis B. J., 1970, Journal of Crystal Growth, V6, P269, DOI 10.1016/0022-0248(70)90079-5
[5] UBER DIE DARSTELLUNG NIEDERER SULFIDE
GASTINGER, E
[J]. ZEITSCHRIFT FUR NATURFORSCHUNG PART B-CHEMIE BIOCHEMIE BIOPHYSIK BIOLOGIE UND VERWANDTEN GEBIETE, 1955, 10 (02): : 115 - 116
[6] Heyraud J. C., 1968, Journal of Crystal Growth, V2, P405, DOI 10.1016/0022-0248(68)90037-7
[7] CRYSTALLOGRAPHIC ORIENTATIONS AND INTERFACIAL MISMATCHES OF SINGLE-CRYSTAL CDS FILMS DEPOSITED ON VARIOUS FACES OF ZINC-BLENDE-TYPE MATERIALS
IGARASHI, O
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (10) : 4035 - &
[8] KROGER FA, 1954, J CHEM PHYS, V22, P250
[9] Lieth R. M. A., 1967, MATER SCI ENG, V2, P193
[10] VAPOR-DEPOSITED THIN-FILM HETEROJUNCTION DIODES
MULLER, RS
ZULEEG, R
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (05) : 1550 - +