THE PROXIMITY EFFECT IN ELECTRON-BEAM NANOLITHOGRAPHY

被引：2

作者：

BROWNE, MT

CHARALAMBOUS, P

KUDRYASHOV, VA

机构：

[1] Department of Physics, Kings College, Strand, London

[2] Institute of Microelectronics Technology and High Purity Materials, USSR Academy of Sciences, 142432 Chernogolovka, Moscow District

来源：

MICROELECTRONIC ENGINEERING | 1991年 / 13卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(91)90082-O

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the mechanisms which governs the increase in the width of structures produced by high energy electron beam lithography taking into account the effects of secondary electrons arising from exposure of neighbouring structures.

引用

页码：221 / 224

页数：4