10 GBIT-S AND GATE USING DUAL-GATE GAAS-MESFET

被引：6

作者：

TELL, R

ANDERSSON, T

ENG, ST

机构：

来源：

ELECTRONICS LETTERS | 1981年 / 17卷 / 05期

关键词：

D O I：

10.1049/el:19810142

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：201 / 202

页数：2

共 7 条

[1] 16 GBIT-S MULTIPLEXER EXPERIMENT [J].

BARABAS, U .

ELECTRONICS LETTERS, 1978, 14 (16) :524-525

[2]

BENEKING H, 1980, ELECTRON LETT, V14, P511

[3] GBIT-S RATE BIPOLAR PULSE-MODULATION OF SEMICONDUCTOR INJECTION-LASERS [J].

LAU, KY ;

YARIV, A .

OPTICS COMMUNICATIONS, 1980, 35 (03) :337-341

[4] 8 GBIT-S OPTICAL-TRANSMISSION WITH TJS']JS GAAIAS LASER AND P-I-N DETECTION [J].

TELL, R ;

ENG, ST .

ELECTRONICS LETTERS, 1980, 16 (13) :497-498

[5] MULTIPLEXER AT 5 GBIT-S FOR FIBER-OPTICAL COMMUNICATION-SYSTEMS [J].

TELL, R ;

TORPHAMMAR, P ;

ENG, ST .

ELECTRONICS LETTERS, 1977, 13 (25) :765-766

[6] GALLIUM-ARSENIDE SPAWNS SPEED - MONOLITHIC DIGITAL CIRCUITS EMPLOYING MESFET DEVICES PROMISE MULTI-GIGABIT AND HIGHER DATA RATES [J].

VANTUYL, R ;

LIECHTI, C .

IEEE SPECTRUM, 1977, 14 (03) :41-47

[7] GAAS MESFET LOGIC WITH 4-GHZ CLOCK RATE [J].

VANTUYL, RL ;

LIECHTI, CA ;

LEE, RE ;

GOWEN, E .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1977, 12 (05) :485-496

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