SHORT-LIVED FRENKEL DEFECTS IN ALPHA-AL2O3

被引：20

作者：

ALUKER, ED

GAVRILOV, VV

CHERNOV, SA

机构：

[1] Institute of Physics, Latvian Academy of Sciences, Riga

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1992年 / 171卷 / 01期

关键词：

D O I：

10.1002/pssb.2221710131

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The fast luminescence, the transient absorption spectra, and the recombination kinetics are observed and investigated in alpha-Al2O3. Absorption spectra reveal short-lived bands at 2.75 and 2.15 eV. Their decay times remain the same (30 to 200 ns) in the temperature interval 80 to 293 K. They are found to be almost the same as the lifetime of the fast components of the luminescence band at 3.8 eV. They are expected to be due to interstitial aluminium ions. Experimental results argue for subthreshold creation of short-lived Frenkel defect pairs in the cation sublattice of alpha-Al2O3.

引用

页码：283 / 288

页数：6

共 15 条

[1]

ALUKER ED, 1987, FAST RAD STIMULATED

[2]

BARISHNIKOV VI, 1990, FIZ TVERD TELA, V32, P291

[3]

CRAUFORD JH, 1982, J NUCL MATER, V108, P644

[4] OPTICAL-PROPERTIES OF THE F+ CENTER IN CRYSTALLINE AL2O3 [J].

EVANS, BD ;

STAPELBROEK, M .

PHYSICAL REVIEW B, 1978, 18 (12) :7089-7098

[5] COLOR CENTER FORMATION AND BLEACHING IN KCL AND NACL BY ELECTRON PULSE AT 15 DEGREES K [J].

HIRAI, M ;

KONDO, Y ;

YOSHINARI, T ;

UETA, M .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1971, 30 (02) :440-+

[6] RADIATION-DAMAGE IN INSULATORS AT HIGH-DOSES [J].

HUGHES, AE .

RADIATION EFFECTS AND DEFECTS IN SOLIDS-INCORPORATING PLASMA SCIENCE AND PLASMA TECHNOLOGY, 1986, 97 (3-4) :161-173

[7]

ITOH N, 1981, MEM FACULTY ENG NAGO, V33, P164

[8]

KULIS PA, 1985, ELECT PROCESSES DEFE, P85

[9] ELECTRON CENTERS IN SINGLE-CRYSTAL AL2O3 [J].

LEE, KH ;

CRAWFORD, JH .

PHYSICAL REVIEW B, 1977, 15 (08) :4065-4070

[10]

LEWY PW, 1961, PHYS REV, V123, P1226

← 1 2 →