FABRICATION AND BONDING STRENGTH OF BONDED SILICON-QUARTZ WAFERS

被引：18

作者：

ABE, T ^{[1
]}

SUNAGAWA, K ^{[1
]}

UCHIYAMA, A ^{[1
]}

YOSHIZAWA, K ^{[1
]}

NAKAZATO, Y ^{[1
]}

机构：

[1] NAGANO DENSHI,KOHSHOKU,NAGANO 387,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 1B期

关键词：

BONDED SILICON-QUARTZ WAFER; SOI; TFT-LCD; BONDING STRENGTH; CRITICAL THICKNESS; MISFIT DISLOCATION; CRACK;

D O I：

10.1143/JJAP.32.334

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A multiply repeated process of thinning of silicon layer and annealing of the bonded silicon-quartz interface is proposed for tight bonding between a silicon wafer and a quartz wafer which have different thermal expansion coefficients. Silicon layers on quartz with a thickness of 2 mum +/- 0.5 mum were debonded by a high temperature annealing over 650 C, whereas in the case of thinner silicon layers with a thickness under 0.5 mum tensile strengths over 80 MPa (800 kgf/cm2) were obtained in the temperature range from 700 C to 1100 C.

引用

页码：334 / 337

页数：4

共 6 条

[1] SILICON-WAFER BONDING MECHANISM FOR SILICON-ON-INSULATOR STRUCTURES
ABE, T
TAKEI, T
UCHIYAMA, A
YOSHIZAWA, K
NAKAZATO, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (12): : L2311 - L2314
[2] ABE T, 1990, SILICON INSULATOR TE, P61
[3] IKEDA M, 1989, JAPAN DISPLAY 89, P498
[4] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2
[5] MOROZUMI S, 1989, JAPAN DISPLAY TEC DI, P148
[6] SHANNON JM, 1990, 22ND INT C SOL STAT, P941

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