EFFECTS OF (100)-TEXTURED LANIO3 ELECTRODE ON CRYSTALLIZATION AND PROPERTIES OF SOL-GEL-DERIVED PB(ZR0.53TI0.47)O-3 THIN-FILMS

Sol-gel-derived thin films of Pb(Zr0.53Ti0.47)O-3 (PZT) were spin-coated onto the (100)-textured LaNiO3 (LNO) electrode which was deposited on a Pt/Ti/SiO2/Si substrate by rf magnetron sputtering at 350 degrees C. The annealing temperature for obtaining a perovskite PZT film on LNO was reduced by about 50 degrees C compared with that direct deposition on Pt. Highly a- and c-axis-oriented PZT films were obtained by annealing at temperatures above 500 degrees C, while randomly oriented films were formed on Pt electrode. Moreover, the grain size of PZT films grown on LNO was smaller than that of films on Pt. The dielectric constant, epsilon(r), remanent polarization, P-r, and coercive field, E(c), of PZT films on LNO changed markedly with the annealing conditions. epsilon(r), increased and both P-r and E(c) markedly decreased with increasing annealing temperature or time, which was attributed to the out-diffusion of LaNiO3 into PZT films during annealing. Use of the LNO layer as a bottom electrode was also found to greatly improve the fatigue property of PZT films.