RHEED INTENSITY MONITORED GROWTH OF BI-SR-CA-CU-O SUPERCONDUCTORS

被引：10

作者：

SAKAI, S

KASAI, Y

BODIN, P

机构：

[1] Electrotechnical Laboratory, Ibaraki, 305, 1-1-4 Umezono, Tsukuba-shi

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 4A期

关键词：

RHEED INTENSITY OSCILLATION; MBE; BISRCACUO SUPERCONDUCTOR; THIN FILM;

D O I：

10.1143/JJAP.31.L399

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In order to fabricate Bi-Sr-Ca-Cu-O superconducting thin films, the molecular beam epitaxy (MBE) technique with in situ monitoring by reflection high-energy electron diffraction (RHEED) is used. By coevaporated growth of Bi2Sr2CaCu2O8 on LaAlO3 (100) substrates, RHEED intensity oscillation with a period corresponding to the growth of half a unit cell is observed. Out-of-phase oscillations are observed outside the specular spot. After the end of growth, a 10-minute RHEED intensity recovery at the specular spot is found. Possible mechanisms during and after growth are discussed.

引用

页码：L399 / L401

页数：3

共 8 条

[1]

BERKSTRESSER GW, 1991, J CRYST GROWTH, V109, P467, DOI 10.1016/0022-0248(91)90218-T

[2]

BODIN P, 1991, 4TH INT S SUPERCONDU, P6

[3] ATOMICALLY LAYERED HETEROEPITAXIAL GROWTH OF SINGLE-CRYSTAL FILMS OF SUPERCONDUCTING BI2SR2CA2CU3OX [J].