CURRENT-CARRIER TRANSPORT WITH SPACE CHARGE IN SEMICONDUCTORS

被引：78

作者：

VANROOSBROECK, W

机构：

来源：

PHYSICAL REVIEW | 1961年 / 123卷 / 02期

关键词：

D O I：

10.1103/PhysRev.123.474

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：474 / &

共 21 条

[1]

ALLIS WP, 1956, HANDBUCH PHYSIK, V21

[2] PROPERTIES OF SILICON AND GERMANIUM [J].

CONWELL, EM .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1327-1337

DRESSELHAUS, G ;

KIP, AF ;

KITTEL, C .

PHYSICAL REVIEW, 1955, 98 (02) :368-384

[4] PLASMA RESONANCE IN CRYSTALS - OBSERVATIONS AND THEORY [J].

DRESSELHAUS, G ;

KIP, AF ;

KITTEL, C .

PHYSICAL REVIEW, 1955, 100 (02) :618-625

[5] THE TRANSPORT OF INJECTED ELECTRONS AND HOLES IN A SEMICONDUCTOR [J].

GEVERS, R .

PHYSICA, 1955, 21 (11) :888-896

[6]

GROSCHWITZ E, 1956, Z NATURFORSCH, V11A, P482

[7]

GROSCHWITZ E, 1957, Z NATURFORSCH, V12A, P529

KEILSON, J .

[9]

KOENIG SH, 1959, PROC PHYS SOC LONDON, VA73, P959

[10]

PAIGE EG, 1960, PROC PHYS SOC LONDON, VA75, P174