RAMAN-SCATTERING STUDY OF ALLOYED AU-GE OHMIC CONTACTS TO GAAS

被引：9

作者：

KIRILLOV, D

CHUNG, Y

机构：

来源：

关键词：

D O I：

10.1063/1.98832

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：846 / 848

页数：3

共 5 条

[1] RAMAN-SPECTROSCOPY - VERSATILE TOOL FOR CHARACTERIZATION OF THIN-FILMS AND HETEROSTRUCTURES OF GAAS AND ALXGA1-XAS
ABSTREITER, G
BAUSER, E
FISCHER, A
PLOOG, K
[J]. APPLIED PHYSICS, 1978, 16 (04): : 345 - 352
[2] BRODSKY MH, 1975, LIGHT SCATTERING SOL, P208
[3] PHOTOLUMINESCENCE OF METALS
MOORADIAN, A
[J]. PHYSICAL REVIEW LETTERS, 1969, 22 (05) : 185 - +
[4] Palmstrom C. J., 1985, Gallium arsenide materials, devices, and circuits, P195
[5] Robinson G. Y., 1985, Physics and chemistry of III-V compound semiconductor interfaces, P73