ORIGIN OF 1/F NOISE

[1] MODEL OF 1-F NOISE IN ION-IMPLANTED RESISTORS AS A FUNCTION OF THE RESISTANCE, DETERMINED BY A REVERSE BIAS VOLTAGE [J]. SOLID-STATE ELECTRONICS, 1979, 22 (05) : 475 - 478

[2] LATTICE SCATTERING CAUSES 1-F NOISE [J]. PHYSICS LETTERS A, 1978, 66 (04) : 315 - 316

[3] SCATTERING MECHANISMS AND 1-F NOISE IN SEMICONDUCTORS [J]. PHYSICA B & C, 1981, 103 (2-3): : 345 - 347

[4] 1-F NOISE OF HOT CARRIERS IN N-TYPE SILICON [J]. PHYSICA B & C, 1981, 103 (2-3): : 340 - 344

[5] GENERALIZED DIFFUSION-COEFFICIENT IN ONE-DIMENSIONAL RANDOM-WALKS WITH STATIC DISORDER [J]. PHYSICAL REVIEW B, 1981, 24 (09): : 5260 - 5269

[6] PALENSKIS VP, 1976, RADIOTEKH ELEKTRON+, V21, P2433

[7] SZE CM, PHYSICS SEMICONDUCTO

[8] CONCENTRATION, MOBILITY AND 1-F NOISE OF ELECTRONS AND HOLES IN THIN BISMUTH-FILMS [J]. THIN SOLID FILMS, 1980, 65 (03) : 283 - 292

[9] FLICKER (1-F) NOISE - EQUILIBRIUM TEMPERATURE AND RESISTANCE FLUCTUATIONS [J]. PHYSICAL REVIEW B, 1976, 13 (02): : 556 - 573

[1] MODEL OF 1-F NOISE IN ION-IMPLANTED RESISTORS AS A FUNCTION OF THE RESISTANCE, DETERMINED BY A REVERSE BIAS VOLTAGE [J]. SOLID-STATE ELECTRONICS, 1979, 22 (05) : 475 - 478

[2] LATTICE SCATTERING CAUSES 1-F NOISE [J]. PHYSICS LETTERS A, 1978, 66 (04) : 315 - 316

[3] SCATTERING MECHANISMS AND 1-F NOISE IN SEMICONDUCTORS [J]. PHYSICA B & C, 1981, 103 (2-3): : 345 - 347

[4] 1-F NOISE OF HOT CARRIERS IN N-TYPE SILICON [J]. PHYSICA B & C, 1981, 103 (2-3): : 340 - 344

[5] GENERALIZED DIFFUSION-COEFFICIENT IN ONE-DIMENSIONAL RANDOM-WALKS WITH STATIC DISORDER [J]. PHYSICAL REVIEW B, 1981, 24 (09): : 5260 - 5269

[6] PALENSKIS VP, 1976, RADIOTEKH ELEKTRON+, V21, P2433

[7] SZE CM, PHYSICS SEMICONDUCTO

[8] CONCENTRATION, MOBILITY AND 1-F NOISE OF ELECTRONS AND HOLES IN THIN BISMUTH-FILMS [J]. THIN SOLID FILMS, 1980, 65 (03) : 283 - 292

[9] FLICKER (1-F) NOISE - EQUILIBRIUM TEMPERATURE AND RESISTANCE FLUCTUATIONS [J]. PHYSICAL REVIEW B, 1976, 13 (02): : 556 - 573