ATOMIC-SCALE ROUGHNESS OF GAAS/ALAS INTERFACES - A RAMAN-SCATTERING STUDY OF ASYMMETRICAL SHORT-PERIOD SUPERLATTICES

被引：65

作者：

JUSSERAND, B ^{[1
]}

MOLLOT, F ^{[1
]}

MOISON, JM ^{[1
]}

LEROUX, G ^{[1
]}

机构：

[1] LAB BAGNEUX 196,CNRS,F-92220 BAGNEUX,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 06期

关键词：

D O I：

10.1063/1.103646

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present Raman spectra obtained from very short period (a few atomic layers) GaAs/AlAs superlattices with asymmetrical unit cells containing two different GaAs wells. This allows us to analyze quantitatively for the first time the atomic-scale component of the interface roughness. We demonstrate that it mainly originates at the GaAs on AlAs interface and strongly decreases with the growth temperature and the underlying AlAs layer thickness.

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页码：560 / 562

页数：3

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