POSITRON TRAPPING IN VACANCIES IN INDIUM DOPED CDTE CRYSTALS

被引：27

作者：

GELYSYKES, C

CORBEL, C

TRIBOULET, R

机构：

[1] UNIV PARIS 06,LAB SRI,F-75231 PARIS 05,FRANCE

[2] CNRS,MEUDON BELLEVUE,PHYS SOLIDES LAB,F-92195 MEUDON,FRANCE

来源：

SOLID STATE COMMUNICATIONS | 1991年 / 80卷 / 01期

关键词：

D O I：

10.1016/0038-1098(91)90602-R

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In weakly n-type CdTe(In) crystals grown by the travelling heater method, positrons annihilate in vacancy-type defects with a lifetime of 320 +/- 4 ps. The concentration of these native defects varies with the concentration of indium and electron in agreement with the model of self-compensation where the indium donors are compensated by indium-vacancy complexes. These defects are assumed to be (VCdIn)-complexes. The positron trapping in these complexes disappears at low temperature. This phenomenon is attributed to competing trapping of positrons by negative ions which are either residual impurities or intrinsic defects.

引用

页码：79 / 83

页数：5

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