ELECTRICAL PROPERTIES OF RF SPUTTERED BISMUTH TELLURIDE THIN-FILMS

被引：13

作者：

MCCULLEY, MJ ^{[1
]}

NEUDECK, GW ^{[1
]}

LIEDL, GL ^{[1
]}

机构：

[1] PURDUE UNIV,W LAFAYETTE,IN 47907

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1973年 / 10卷 / 02期

关键词：

SPUTTERING;

D O I：

10.1116/1.1317072

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Measurements were made of resistivity, Hall coefficient and composition of thin/polycrystalline films prepared by rf sputtering from a sintered cathode of stoichiometric Bi//2Te//3. Resistivity varied from 0. 60 to 9. 0 milliohm-cm in the range 25 to 49 wt. % Te. High carrier concentration and low ionization energies indicate metallic characteristics.

引用

页码：391 / 392

页数：2

共 6 条

[1]

BROWN A, 1962, INT J PHYS CHEM SOLI, V23, P1597

[2]

CHAMPNESS CH, 1966, J PHYS, V44, P769

[3] CRYSTAL GROWTH + ORIENTATION IN SPUTTERED FILMS OF BISMUTH TELLURIDE [J].