ION-BEAM MODIFICATION OF CONDUCTING POLYMERS

被引:21
作者
WADA, T
TAKENO, A
IWAKI, M
SASABE, H
机构
[1] Inst of Physical & Chemical, Research, Wako, Jpn, Inst of Physical & Chemical Research, Wako, Jpn
关键词
DEPTH PROFILE - DOPANT DISTRIBUTION;
D O I
10.1016/0379-6779(87)90944-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:585 / 590
页数:6
相关论文
共 3 条
[1]  
Allen WW, 1980, J SYNTH MET, V1, P151
[2]   POLYACETYLENE, (CH)X - N-TYPE AND P-TYPE DOPING AND COMPENSATION [J].
CHIANG, CK ;
GAU, SC ;
FINCHER, CR ;
PARK, YW ;
MACDIARMID, AG ;
HEEGER, AJ .
APPLIED PHYSICS LETTERS, 1978, 33 (01) :18-20
[3]   FABRICATION OF A STABLE P-N-JUNCTION IN A POLYACETYLENE FILM BY ION-IMPLANTATION [J].
WADA, T ;
TAKENO, A ;
IWAKI, M ;
SASABE, H ;
KOBAYASHI, Y .
JOURNAL OF THE CHEMICAL SOCIETY-CHEMICAL COMMUNICATIONS, 1985, (17) :1194-1195