CARRIER GENERATION RATE AND EFFECTIVE LIFETIME IN INSB THIN FILMS

被引:4
作者
LILE, DL
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D O I
10.1016/S0038-1101(71)80012-6
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:855 / &
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共 29 条
[1]   DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J].
BARAFF, GA .
PHYSICAL REVIEW, 1962, 128 (06) :2507-&
[3]   UNIFORM SILICON P-N JUNCTIONS .2. IONIZATION RATES FOR ELECTRONS [J].
CHYNOWETH, AG .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (07) :1161-1165
[4]   CRYSTAL MORPHOLOGY OF MELT GROWN INSB FILMS [J].
CLAWSON, AR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04) :769-&
[5]  
CUNNINGHAM RW, 1963, D1820306 BOEING REP
[6]  
DAVIS NM, 1967, 9 IEEE ANN S EL ION
[7]   THEORY OF AVALANCHE BREAKDOWN IN INSB AND INAS [J].
DUMKE, WP .
PHYSICAL REVIEW, 1968, 167 (03) :783-&
[8]  
Frolich H., 1937, P ROY SOC LOND A MAT, VA160, P230
[9]   HOT ELECTRONS IN INDIUM ANTIMONIDE [J].
GLICKSMAN, M ;
HICINBOTHEM, WA .
PHYSICAL REVIEW, 1963, 129 (04) :1572-+
[10]   HIGH ELECTRIC FIELD EFFECTS IN N-INDIUM ANTIMONIDE [J].
GLICKSMAN, M ;
STEELE, MC .
PHYSICAL REVIEW, 1958, 110 (05) :1204-1205