SIZE EFFECTS, PHASE SLIP, AND THE ORIGIN OF F-A NOISE IN NBSE3

被引：41

作者：

MAHER, MP ^{[1
]}

ADELMAN, TL ^{[1
]}

MCCARTEN, J ^{[1
]}

DICARLO, DA ^{[1
]}

THORNE, RE ^{[1
]}

机构：

[1] CORNELL UNIV, CTR MAT SCI, ITHACA, NY 14853 USA

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.43.9968

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The threshold electric field for charge-density-wave (CDW) depinning in NbSe3 varies inversely with crystal thickness. Since the thickness of nearly all NbSe3 crystals varies in steps across their width, a macroscopic inhomogeneity in CDW pinning results. We show that CDW phase slip occurring along thickness steps provides the dominant source of broadband noise in NbSe3, and is responsible for complicated narrow-band noise spectra and mode-locking behavior. In crystals with no thickness steps, the evidence for scaling behavior of the CDW current near threshold is not convincing.

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页码：9968 / 9971

页数：4

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