PHOTOIONIZATION CROSS-SECTION FOR MANGANESE ACCEPTORS IN GALLIUM-ARSENIDE

被引：26

作者：

BROWN, WJ ^{[1
]}

WOODBURY, DA ^{[1
]}

BLAKEMORE, JS ^{[1
]}

机构：

[1] FLORIDA ATLANTIC UNIV, PHYS DEPT, BOCA RATON, FL 33432 USA

来源：

PHYSICAL REVIEW B | 1973年 / 8卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.8.5664

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5664 / 5670

页数：7

共 16 条

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CHAPMAN, RA .

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[2] APPLICATION OF QUANTUM-DEFECT METHOD TO OPTICAL TRANSITIONS INVOLVING DEEP EFFECTIVE-MASS-LIKE IMPURITIES IN SEMICONDUCTORS [J].

BEBB, HB .

PHYSICAL REVIEW, 1969, 185 (03) :1116-&

[3]

BEBB HB, 1971, 3RD P INT C PHOT STA, P245

[4] THERMAL ACTIVATION-ENERGY OF MANGANESE ACCEPTORS IN GALLIUM-ARSENIDE AS A FUNCTION OF IMPURITY SPACING [J].

BLAKEMORE, JS ;

BROWN, WJ ;

STASS, ML ;

WOODBURY, DA .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) :3352-3354

[5]

BLATTE M, 1970, THESIS U FRANKFURT

[6] TRANSPORT AND PHOTOELECTRICAL PROPERTIES OF GALLIUM-ARSENIDE CONTAINING DEEP ACCEPTORS [J].

BROWN, WJ ;

BLAKEMOR.JS .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) :2242-&

[7] PHOTOEXCITATION AND PHOTOIONIZATION OF NEUTRAL MANGANESE ACCEPTORS IN GALLIUM ARSENIDE [J].

CHAPMAN, RA ;

HUTCHINSON, WG .

PHYSICAL REVIEW LETTERS, 1967, 18 (12) :443-+

[8]

DEXTER DL, 1958, SOLID STATE PHYSICS, V6

[9]

HAISTY RW, 1965, 7 P INT C PHYS SEM, P1161

[10] ACTIVATION ENERGY OF HOLES IN ZN-DOPED GAAS [J].

HILL, DE .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) :1815-&

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