GROWTH AND CHARACTERIZATION OF LATTICE-MATCHED EPITAXIAL-FILMS OF GAXIN1-XAS-INP BY LIQUID-PHASE EPITAXY

被引：36

作者：

PEARSALL, TP ^{[1
]}

HOPSON, RW ^{[1
]}

机构：

[1] THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1978年 / 7卷 / 01期

关键词：

D O I：

10.1007/BF02656025

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：133 / 146

页数：14

共 17 条

[1] GROWTH CHARACTERIZATION OF INP-INGAASP LATTICE-MATCHED HETEROJUNCTIONS [J].

ANTYPAS, GA ;

MOON, RL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) :1574-1577

[2]

COLBY JW, 1968, ADVANCES XRAY ANALYS, V11, P287

[3]

COLBY JW, 1971, 6TH P NAT CONT EL PR, P17

[4] ROOM-TEMPERATURE CW OPERATION OF GALNASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MU-M [J].

HSIEH, JJ ;

ROSSI, JA ;

DONNELLY, JP .

APPLIED PHYSICS LETTERS, 1976, 28 (12) :709-711

[5]

HSIEH JJ, N AM S GAAS RELATED

[6] PHOTODETECTORS FOR OPTICAL COMMUNICATION SYSTEMS [J].

MELCHIOR, H ;

FISHER, MB ;

ARAMS, FR .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (10) :1466-+

[7]

NEUBERGER M, 1972, III V TERNARY SEMICO, P5

[8]

NEUSE CJ, 1972, IEEE T ELECTRON DEV, V17, P1067

[9]

Panish M. B., 1972, PROGR SOLID STATE CH, V7, P39

[10]

Panish M.B., 1970, J CHEM THERMODYN, V2, P299, DOI 10.1016/0021-9614(70)

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